GROWTH OF SILICON CARBIDE NANOLAYERS ON CONTACT OF POROUS CARBON WITH MOLTEN SILICON

The mathematical model of the growth of a silicon carbide layer includes two diffusion equations for silicon and carbon atoms and an equation describing the motion of the chemical conversion front. Analytical estimates and results of calculations are presented. Parametric calculations for different values of silicon solubility in silicon carbide are carried out. It is shown that the effective density of carbon exerts its infl uence on the duration of the process of silicon impregnation and the composite morphology
   
Author:  P. S. Grinchuk, H. M. Abuhimd, S. P. Fisenko and Yu. A. Khodyko
Keywords:  silicon solubility, diffusion, chemical conversion front, quasi-stationarity
Page:  1102