DISTINCTIVE FEATURES OF THE TEMPERATURE SENSITIVITY OF A TRANSISTOR STRUCTURE IN A BIPOLAR MODE OF MEASUREMENT

Results are presented of an experimental investigation of the temperature sensitivity of an individual base-tocollector junction of a bipolar transistor structure and of this same structure in the case of series connection of blocking emitter and collector junctions. It is shown that the temperature-sensitivity coeffi cient of the transistor structure operating in a bipolar mode of measurement is an order of magnitude larger than an analogous coeffi cient of the base-to-collector junction.
   
Author:  A. V. Karimov, D. P. Dzhuraev, Sh. M. Kuliev, and A. A. Turaev
Keywords:  bipolar transistor, temperature pickup, temperature sensitivity, bipolar mode
Page:  514