NONLINEAR EFFECTS IN MSM STRUCTURES BASED ON Ag4SSe

MSM structures W–Ag₄SSe–W have been produced and their volt–ampere characteristics in the temperature range 290–350 K and at a temperature of 77 K were investigated. It is shown that the volt–ampere characteristic of such an MSM structure is substantially nonlinear and takes an N-like shape at different polarities of the voltage applied to the structure and that the portion of this characteristic corresponding to the negative resistance of the structure is preceded by the portion with a zero slope. It was established that the breakdown voltage of the volt– ampere characteristic of an W–Ag₄SSe–W structure is determined by its temperature and is equal to ~0.3 V, which corresponds to the strength 1 V/cm of the electric field in it, and that the breakdown current of the structure changes by the law I ~ T ^0.25 with increase in its temperature. The nonlinearity of the volt–ampere characteristics with a negative-resistance portion of the W–Ag₄SSe–W structures obtained is explained by the existence of the trapping level in them at a certain state of the electrons at the metal–semiconductor interface
   
Author:  G. S. Gadzhieva, I. A. Akhmedov, and N. N. Abdul-zade
Keywords:  MSM structure, volt–ampere characteristic, negative resistance
Page:  1030