ON THE POSSIBILITY OF SYNTHESIS OF SILICON CARBIDE USING AN INDIRECT-ACTION PLASMA GUN

The paper presents the results of experimental and theoretical investigations into the synthesis of silicon carbide using the energy of thermal plasma. The experimental investigations were conducted on a stand with 4 kW of power making it possible to have a thermal plasma fl ow with a bulk temperature of 5600 K. Regimes have been identifi ed for the synthesis of silicon carbide and concentration of composite charge mixture components determining its yield. On the basis of processing experimental data, key characteristics have been calculated for the technological process of silicon carbide synthesis (time and load mass)
The paper presents the results of experimental and theoretical investigations into the synthesis of silicon carbide using the energy of thermal plasma. The experimental investigations were conducted on a stand with 4 kW of power making it possible to have a thermal plasma fl ow with a bulk temperature of 5600 K. Regimes have been identifi ed for the synthesis of silicon carbide and concentration of composite charge mixture components determining its yield. On the basis of processing experimental data, key characteristics have been calculated for the technological process of silicon carbide synthesis (time and load mass)
Author:  R. D. Gerasimov, V. V. Shekhovtsov, Yu. Z. Vasil′eva, A. Ya. Pak, G. Ya. Mamontov and O. G. Volokitin
Keywords:  synthesis, plasmatron, silicon carbide, carbon, thermal plasma
Page:  463