INFLUENCE OF THE LASER PULSE ANNEALING OF THE SILICON IMPLANTED WITH INDIUM AND ARSENIC IONS ON ITS OPTICAL AND STRUCTURAL PROPERTIES

Optical and structural properties of silicon layers implanted with indium and arsenic ions and annealed by laser pulses were investigated. It is shown with the use of the Rutherford backscattering and channeling methods that the fraction of indium and arsenic atoms in the silicon crystal lattice of such a layer comprises 31–35%. It was established by the radiation absorption spectra of the indicated layers that the degree of absorption of the nearinfrared radiation (1.1–2.4 μm) by them is larger by several orders of magnitude than that of these layers in the initial state with no implantation and annealing (the absorption effi ciency comprises 50–60%). The effi ciency of absorption of the mid-infrared radiation quanta (3–25 μm) by a silicon layer implanted with indium and arsenic ions is higher by approximately three times than that of the initial one at a laser radiation energy density of 2.0–2.5 J/cm ² . A broad band 1.1–1.6 μm has been revealed in the photoluminescence spectra of the silicon layers implanted with indium and arsenic ions and annealed by laser pulses
Optical and structural properties of silicon layers implanted with indium and arsenic ions and annealed by laser pulses were investigated. It is shown with the use of the Rutherford backscattering and channeling methods that the fraction of indium and arsenic atoms in the silicon crystal lattice of such a layer comprises 31–35%. It was established by the radiation absorption spectra of the indicated layers that the degree of absorption of the nearinfrared radiation (1.1–2.4 μm) by them is larger by several orders of magnitude than that of these layers in the initial state with no implantation and annealing (the absorption effi ciency comprises 50–60%). The effi ciency of absorption of the mid-infrared radiation quanta (3–25 μm) by a silicon layer implanted with indium and arsenic ions is higher by approximately three times than that of the initial one at a laser radiation energy density of 2.0–2.5 J/cm ² . A broad band 1.1–1.6 μm has been revealed in the photoluminescence spectra of the silicon layers implanted with indium and arsenic ions and annealed by laser pulses
Author:  F. F. Komarov, O. V. Mil'chanin, I. N. Parchomenko, P. V. Kuchinskii, A. E. Al'zhanova, M. A. Mokhovikov, E. Wendler
Keywords:  hyperdoped silicon, laser pulse annealing, Rutherford backscattering, radiation absorption spectrum, photoluminescence
Page:  745